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Press Release: ROHM’s New SiC Schottky Barrier Diodes for High-Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance

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Category: Globe NewsWire News Distribution Service

Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by increasing the creepage distance between terminals. The initial lineup includes eight models (SCS2xxxNHR) for automotive applications such as onboard chargers (OBCs), with plans to  deploy eight…


Posted: 2024-11-12 05:00:00

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