Press Release: ROHM’s New SiC Schottky Barrier Diodes for High-Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance
Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by increasing the creepage distance between terminals. The initial lineup includes eight models (SCS2xxxNHR) for automotive applications such as onboard chargers (OBCs), with plans to deploy eight…
Press Release: ROHM’s New SiC Schottky Barrier Diodes for High-Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance - Newscast
Tue, 18 Mar 2025 03:06:00 GMT Researchers from Singapore’s Nanyang Technological University and its Agency for Science, Technology and Research are claiming to have provided the first successful demonstration of functional devices ...
Fri, 21 Feb 2025 10:43:00 GMT Achieves approximately 1.3 times the creepage distance compared to standard products ROHM's New Surface Mount SiC Schottky Barrier Diodes Extends creepage distance to a minimum of 5.1mm ...
