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ROHM’s New SiC Schottky Barrier Diodes for High-Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance
Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ... Read More
SiC Schottky Barrier Diodes Built for High-Voltage xEV Systems
New surface-mount automotive-grade silicon-carbide (SiC) Schottky barrier diodes (SBDs) from ROHM Semiconductor are intended to improve insulation resistance by increasing the creepage distance ... Read More
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KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added the “TRSxxx120Hx Series” of 1200V products to its lineup of third-generation silicon carbide ... Read More
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