Press Release Rohm’s New Sic Schottky Barrier Diodes For High Voltage Xev Systems Featuring A Unique Package Design For Improved Insulation Resistance

ROHM’s New SiC Schottky Barrier Diodes for High-Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance

Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ... Read More

SiC Schottky Barrier Diodes Built for High-Voltage xEV Systems

New surface-mount automotive-grade silicon-carbide (SiC) Schottky barrier diodes (SBDs) from ROHM Semiconductor are intended to improve insulation resistance by increasing the creepage distance ... Read More

High Performance SiC Schottky Diodes

The SCS1xxAGC series of high-performance silicon carbide (SiC) Schottky barrier diodes (SBD) offers industry-leading low forward voltage and fast recovery time, leading to improved power conversion ... Read More

ROHM Presents New 200 V Ultra-Low IR Schottky Barrier Diodes

ROHM announced the availability of 200 V ultra-low IR Schottky Barrier Diodes (SBD) optimized for automotive applications including powertrains and xEVs. The RBxx8BM/NS200 expands on the RBxx8 lineup ... Read More

ROHM Develops Breakthrough Schottky Barrier Diode Combining Low VF and IR for Advanced Image Sensor Protection

ROHM Semiconductor today announced the development of an innovative Schottky barrier diode that overcomes the traditional V F / I R trade-off, delivering high reliability protection for a wide range ... Read More

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KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added the “TRSxxx120Hx Series” of 1200V products to its lineup of third-generation silicon carbide ... Read More