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2024-11-12 | ROHM's New SiC Schottky Barrier Diodes for High-Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance | Press Release - Stockhouse
(2024-11-12) ROHM's New SiC Schottky Barrier Diodes for High-Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance Stockhouse.com uses cookies on this site. By ... Read More
ROHM's New SiC Schottky Barrier Diodes Featuring Industry-Low VF With High Surge Resistance - Yahoo Finance
ROHM has recently announced the availability of 3rd generation SiC Schottky Barrier Diodes optimized for power supply PFC circuits in servers and high performance PCs.The SCS3 series adopts a new ... Read More
ROHM’s New SiC Schottky Barrier Diodes for High-Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance - Markets Insider
Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ... Read More
ROHM’s New SiC Schottky Barrier Diodes for High-Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance - Yahoo Finance
Achieves approximately 1.3 times the creepage distance compared to standard products ROHM's New Surface Mount SiC Schottky Barrier Diodes Extends creepage distance to a minimum of 5.1mm ... Read More
ROHM’s New SiC Schottky Barrier Diodes for High-Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance - ABC27
Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ... Read More
ROHM's New SiC Schottky Barrier Diodes for High-Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance - The Manila Times
Increasing the creepage distance supresses creepage discharge, eliminates the need for insulation treatment via potting Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) -- ROHM ... Read More
ROHM’s New SiC Schottky Barrier Diodes for High-Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance - WWLP
Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ... Read More
ROHM’s New SiC Schottky Barrier Diodes for High-Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance - WGN Radio 720
Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ... Read More
ROHM’S New Sic Schottky Barrier Diodes For High-Voltage Xev Systems: Featuring A Unique Package Design For Improved Insulation Resistance - MENAFN.COM
Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ... Read More
ROHM’s New SiC Schottky Barrier Diodes for High-Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance - Yahoo Finance
Achieves approximately 1.3 times the creepage distance compared to standard products ROHM's New Surface Mount SiC Schottky Barrier Diodes Extends creepage distance to a minimum of 5.1mm, approximately ... Read More
ROHM’s New SiC Schottky Barrier Diodes for High-Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance | Taiwan News | Nov. 12, 2024 13:00
Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ... Read More
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